The TIP41 is an NPN bipolar junction transistor (BJT) designed for versatile applications in electronic circuits. As a member of the TIPxx series, it offers a reliable and cost-effective solution for amplification and switching tasks. The transistor's NPN configuration makes it suitable for applications where a negative-doped semiconductor material in the emitter region is essential for proper functioning.

Features:

1. 1. Voltage Ratings:

      • Collector-Emitter Voltage (VCE): Capable of handling up to 100 volts between its collector and emitter terminals.
      • Collector-Base Voltage (VCB): Exhibits a robust voltage tolerance of 100 volts across its collector and base terminals.
      • Emitter-Base Voltage (VEB): Maintains stability with a 5-volt rating between its emitter and base terminals.
   2. Current Handling: Collector Current (IC): Demonstrates a capacity to manage currents of up to 6 amperes during operation.
   3. Power Dissipation: Total Power Dissipation (Ptot): With a dissipation power of -65 watts, it efficiently handles power dissipation to ensure optimal performance even under challenging conditions.
   4. Amplification Characteristics: Gain (hFE): Exhibits a gain ranging from -15 to 75 volts, emphasizing its amplification capabilities across a diverse range of applications.
   5. Frequency Response: Transition Frequency (fT): Displays a transition frequency of -3 megahertz, indicating the frequency at which its current gain diminishes to unity.
   6. Temperature Range: Operating and Storage Temperature Range: Designed to operate and store within a wide temperature span, ranging from -65 to +150 °C. This broad temperature tolerance ensures functionality and stability across various environmental conditions.

2. Maximum Ratings:

   Symbols	Ratings	Parameters
   VCBO	100 volts	These are the voltage across collector and base.
   VCEO	100 volts	These are the voltage around collector and emitter.
   VEBO	5 volts	These are the voltage around emitter and base.
   IC	6 amperes	It is the current at collector which is dc.
   ICM	10 amperes	It is the pulse of collector current.
   IB	3 amperes	It is the current at the base.
   Pc	65 watts	It is the power dissipation at  Collector (TC=25°C).
   TJ	150 C	It is the Junction Temperature.

1. Pin Configuration:

   • Emitter (E), Base (B), Collector (C): The transistor's three leads are arranged in a line, facilitating straightforward integration into electronic circuits.
   • 

2. Electrical Characteristics:

   Symbols	Ratings	Parameters
   ICEO	0.7 mA	It is the value of the cut-off current the collector.
   IEBO	1 A	It is the value of emitter cut off the current.
   ICES	0.4 mA	It is the value of collector cut-off current.
   VCEO	100 V	These are the collector and emitter supporting voltage.
   VCE	1.5 V	These are the collector and emitter supporting voltage.
   VBE	2 V	It is the value of voltage across base and emitter terminals.
   hFE	75	It the value of DC current gain.

    

Package includes:

• 1 x TIP41 NPN bipolar junction transistor (BJT)