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IRLZ44NPBF is the New Generation HEXFETs that utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Mosfet Type: Field-Effect Transistor N-channel
Package-Type: Through Hole TO220
Logic-Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
VDSS = 55V
RDS(on) = 0.022Ω
ID = 47A
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1 x High Power LOW Gate MOSFET N-Channel IRLZ44NPBF TO220