Electronics

Transistor NPN S9018

AED 1.05

1

Description

S9018 is an NPN silicon transistor. It is manufactured to work in radio frequency applications but it can also be used as a switch or amplifier for audio and signal amplification purposes. One of the main differences between this transistor and other BJT transistors is its 1100MHz or 1.1GHz bandwidth. The normal BJT transistors can work from 50MHz to 300MHz but this transistor can work with much higher frequencies due to which it can be an ideal transistor to use in a variety of RF applications. It is also widely used by electronic tinkers & hobbyists. Moreover, it is also used in a variety of commercial appliances and devices.

 

Specifications:

  • Package-Type: TO-92
  • Transistor Type: NPN
  • Max Collector Current(IC): 50mA
  • Max Collector-Emitter Voltage (VCE): 15V
  • Max Collector-Base Voltage (VCB): 30V
  • Max Emitter-Base Voltage (VEBO): 5V
  • Max Collector Dissipation (Pc): 400 milliwatt
  • Max Transition Frequency (fT): 1100 MHz
  • Minimum & Maximum DC Current Gain (hFE): 28 – 198
  • Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

 

Where We Can Use it & How to Use:

As mentioned above SS9018 is built to work in RF applications therefore it can perform well in these types of circuits. Moreover, this transistor is an NPN BJT transistor therefore it can be wired the same as a normal BJT transistor is wired in a circuit.

 

Applications:

RF Amplification

RF Oscillation

Audio amplification

Switching

Sensor Circuits

 

How to Safely Long Run in a Circuit:

It is always suggested not to touch the maximum ratings, for getting long-term stable performance with a component. Using a component to its maximum rating or near its maximum ratings provides stress on a component that may result in failure of a component in a circuit or not provide the expected performance. To get long-term performance with SS9018 do not operate load more than 15V through it, do not drive load more than 50mA, and always store and operate the transistor above -55 centigrade and below +150 centigrade.